Design of Ternary Memory Cell Using QDGFET

Abstract

Ternary logic is a promising option to conventional binary logic because it can handle higher information in less number of gate count. Less number of gates requires less area in a chip which is equivalent to gold in today’s nano scale circuits. A novel design of a ternary memory cell based on QDGFETs is proposed. Memory cell is made of two back to back connected inverters. It is the conventional 6T memory cell design. Main advantage of QDGFET is that it can be used directly by replacing CMOS in the circuit without making any changes. Embedded memory requires the largest share of area in modern high-performance circuit designs. As the technology progresses the demand for high capacity memories also increases. So to fulfil this demand, researchers are trying to come up with new technology and solutions. The use of ternary logic instead of binary logic is a possible solution. So in this paper I have designed a ternary memory cell which stores one bit of ternary logic data.